I have been using the Deformation Potential theory to evaluate the electron scattering rates in nanomaterials. In each case, I was under the impression that the Conduction Band Minimum (CBM) and the Valence Band Maximum (VBM) should be expected to vary linearly with applied strain. For example, refer to Figure 2 of Reference 1.
However, Reference 2 (Figure 5) shows the CBM and VBM varying in a non-linear form.
Is there an explanation for such a variation? Was it wrong to assume that the band edges of semiconductors would vary linearly with applied strain?
Note: I have read a significant number of articles (for various materials and nano-structures) where the band edges vary linearly.
- Chen, X.; Zhang, X.; Gao, J.; Li, Q.; Shao, Z.; Lin, H.; Pan, M. Computational Search for Better Thermoelectric Performance in Nickel-Based Half-Heusler Compounds. ACS Omega, 2021, 6, 18269–18280. https://doi.org/10.1021/acsomega.1c02172.
- Ma, W.; Record, M.-C.; Tian, J.; Boulet, P. Strain Effects on the Electronic and Thermoelectric Properties of n(PbTe)-m(Bi2Te3) System Compounds. Materials, 2021, 14, 4086. https://doi.org/10.3390/ma14154086.